| PartNumber | TPN4R303NL,L1Q | TPN4R712MD,L1Q | TPN4R203NC,L1Q |
| Description | MOSFET U-MOSVIII-H 30V 63A 6.8nC MOSFET | MOSFET P-Channel Mosfet 20V UMOS-VI | MOSFET U-MOSVIII-H 30V 53A 24nC MOSFET |
| Manufacturer | Toshiba | Toshiba | Toshiba |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TSON-Advance-8 | TSON Advance-8 | TSON-Advance-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | P-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 20 V | 30 V |
| Id Continuous Drain Current | 63 A | 36 A | 53 A |
| Rds On Drain Source Resistance | 6.3 mOhms | 4.7 mOhms | 35 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.3 V | 500 mV | 2.3 V |
| Vgs Gate Source Voltage | 20 V | 4.5 V | 20 V |
| Qg Gate Charge | 14.8 nC | 65 nC | 24 nC |
| Pd Power Dissipation | 34 W | 42 W | 22 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | Reel |
| Height | 0.85 mm | 0.85 mm | 0.85 mm |
| Length | 3.1 mm | 3.1 mm | 3.1 mm |
| Series | TPN4R303NL | TPN4R712MD | TPN4R203NC |
| Transistor Type | 1 N-Channel | 1 P-Channel | 1 N-Channel |
| Width | 3.1 mm | 3.1 mm | 3.1 mm |
| Brand | Toshiba | Toshiba | Toshiba |
| Fall Time | 3.5 ns | 145 ns | 14 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 4.5 ns | 11 ns | 5 ns |
| Factory Pack Quantity | 5000 | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 19 ns | 443 ns | 52 ns |
| Typical Turn On Delay Time | 10.5 ns | 18 ns | 13 ns |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Unit Weight | - | 0.000705 oz | - |
| Minimum Operating Temperature | - | - | - 55 C |
| Tradename | - | - | UMOSVIII |