TPN5

TPN5900CNH,L1Q vs TPN5441A2ET vs TPN5900CNH

 
PartNumberTPN5900CNH,L1QTPN5441A2ETTPN5900CNH
DescriptionMOSFET UMOSVIII 150V 59mOhm (VGS=10V) TSON-ADV
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTSON-Advance-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage150 V--
Id Continuous Drain Current18 A--
Rds On Drain Source Resistance50 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge7 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation39 W--
ConfigurationTriple--
Channel ModeEnhancement--
PackagingReel--
Height0.85 mm--
Length3.1 mm--
SeriesTPN5900CNH--
Transistor Type1 N-Channel--
Width3.1 mm--
BrandToshiba--
Fall Time4.5 ns--
Product TypeMOSFET--
Rise Time5.2 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time19 ns--
Typical Turn On Delay Time14 ns--
Manufacturer Part # Description RFQ
Toshiba
Toshiba
TPN5900CNH,L1Q MOSFET UMOSVIII 150V 59mOhm (VGS=10V) TSON-ADV
TPN5R203PL,LQ MOSFET X35 Pb-F POWER MOSFET TRANSISTOR TSON-ADV PD=61W F=1MHZ
TPN5900CNHL1QCT-ND New and Original
TPN5900CNHL1QDKR-ND New and Original
TPN5900CNHL1QTR-ND New and Original
TPN5900CNH,L1Q MOSFET UMOSVIII 150V 59mOhm (VGS=10V) TSON-ADV
TPN5900CNHL1Q(M Trans MOSFET N-CH 150V 9A 8-Pin TSON (Alt: TPN5900CNH,L1Q(M)
TPN5441A2ET New and Original
TPN5900CNH New and Original
TPN5900CNHL1Q MOSFET POWER MOSFET TRANSISTOR
TPN5R203PL New and Original
TPN5R203PL,LQ MOSFET X35 Pb-F POWER MOSFET TRANSISTOR TSON-ADV PD=61W F=1MHZ
TPN5R203PLLQ(S Trans MOSFET N-CH 30V 38A 8-Pin TSON (Alt: TPN5R203PL,LQ(S)
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