 |  | | |
| PartNumber | TPN6R003NL,LQ | TPN6R003NL | TPN6R003NL,LQ(S |
| Description | MOSFET N-Ch DTMOS VII-H 32W 1050pF 56A 30V | ||
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TSON-Advance-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 56 A | - | - |
| Rds On Drain Source Resistance | 6.8 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.3 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 17 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 32 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 0.85 mm | - | - |
| Length | 3.1 mm | - | - |
| Series | TPN6R003NL | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 3.1 mm | - | - |
| Brand | Toshiba | - | - |
| Fall Time | 3.3 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 4.1 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 18 ns | - | - |
| Typical Turn On Delay Time | 11 ns | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Toshiba |
TPN6R003NL,LQ | MOSFET N-Ch DTMOS VII-H 32W 1050pF 56A 30V | |
| TPN6R003NLLQCT-ND | New and Original | ||
| TPN6R003NLLQDKR-ND | New and Original | ||
| TPN6R003NLLQTR-ND | New and Original | ||
| TPN6R003NL | New and Original | ||
| TPN6R003NL,LQ(S | New and Original | ||
| TPN6R003NLLQ | MOSFET POWER MOSFET TRANSISTOR | ||
| TPN6R003NLLQ(S | New and Original | ||
| TPN6R003NL,LQ | MOSFET N-Ch DTMOS VII-H 32W 1050pF 56A 30V |