PartNumber | TRS6E65C,S1AQ(S | TRS6E65C | TRS6E65C,S1AQ |
Description | Schottky Diodes & Rectifiers SiC Schottky Diode | DIODE SCHOTTKY 650V 6A TO220-2L | |
Manufacturer | Toshiba | Toshiba Semiconductor and Storage | - |
Product Category | Schottky Diodes & Rectifiers | Diodes, Rectifiers - Single | - |
RoHS | Y | - | - |
Product | Schottky Silicon Carbide Diodes | - | - |
Mounting Style | Through Hole | - | - |
Package / Case | TO-220-2L | - | - |
If Forward Current | 6 A | - | - |
Vrrm Repetitive Reverse Voltage | 650 V | - | - |
Vf Forward Voltage | 1.5 V | - | - |
Ifsm Forward Surge Current | 80 A | - | - |
Configuration | Single | - | - |
Technology | SiC | - | - |
Ir Reverse Current | 90 uA | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Series | TRS6E65C | - | - |
Brand | Toshiba | - | - |
Product Type | Schottky Diodes & Rectifiers | - | - |
Factory Pack Quantity | 50 | - | - |
Subcategory | Diodes & Rectifiers | - | - |
Vr Reverse Voltage | 650 V | - | - |
Packaging | - | Tube | - |
Package Case | - | TO-220-2 | - |
Mounting Type | - | Through Hole | - |
Supplier Device Package | - | TO-220-2L | - |
Speed | - | Fast Recovery = 200mA (Io) | - |
Diode Type | - | Silicon Carbide Schottky | - |
Current Reverse Leakage Vr | - | 90μA @ 650V | - |
Voltage Forward Vf Max If | - | 1.7V @ 6A | - |
Voltage DC Reverse Vr Max | - | 650V | - |
Current Average Rectified Io | - | 6A (DC) | - |
Reverse Recovery Time trr | - | - | - |
Capacitance Vr F | - | 35pF @ 650V, 1MHz | - |
Operating Temperature Junction | - | 175°C (Max) | - |