TRS6E65C,S

TRS6E65C,S1AQ(S vs TRS6E65C,S1Q vs TRS6E65C,S1AQ

 
PartNumberTRS6E65C,S1AQ(STRS6E65C,S1QTRS6E65C,S1AQ
DescriptionSchottky Diodes & Rectifiers SiC Schottky DiodeSchottky Diodes & Rectifiers SiC Schottky 650V 90uA 1.70V IF 6ADIODE SCHOTTKY 650V 6A TO220-2L
ManufacturerToshibaToshiba Semiconductor and Storage-
Product CategorySchottky Diodes & RectifiersDiodes, Rectifiers - Single-
RoHSY--
ProductSchottky Silicon Carbide Diodes--
Mounting StyleThrough Hole--
Package / CaseTO-220-2L--
If Forward Current6 A--
Vrrm Repetitive Reverse Voltage650 V--
Vf Forward Voltage1.5 V--
Ifsm Forward Surge Current80 A--
ConfigurationSingle--
TechnologySiC--
Ir Reverse Current90 uA--
Maximum Operating Temperature+ 175 C--
SeriesTRS6E65C--
BrandToshiba--
Product TypeSchottky Diodes & Rectifiers--
Factory Pack Quantity50--
SubcategoryDiodes & Rectifiers--
Vr Reverse Voltage650 V--
Packaging-Tube-
Package Case-TO-220-2-
Mounting Type-Through Hole-
Supplier Device Package-TO-220-2L-
Speed-Fast Recovery = 200mA (Io)-
Diode Type-Silicon Carbide Schottky-
Current Reverse Leakage Vr-90μA @ 650V-
Voltage Forward Vf Max If-1.7V @ 6A-
Voltage DC Reverse Vr Max-650V-
Current Average Rectified Io-6A (DC)-
Reverse Recovery Time trr---
Capacitance Vr F-35pF @ 650V, 1MHz-
Operating Temperature Junction-175°C (Max)-
Manufacturer Part # Description RFQ
Toshiba
Toshiba
TRS6E65C,S1AQ(S Schottky Diodes & Rectifiers SiC Schottky Diode
TRS6E65C,S1AQ(S Schottky Diodes & Rectifiers SiC Schottky Diode
TRS6E65C,S1Q Schottky Diodes & Rectifiers SiC Schottky 650V 90uA 1.70V IF 6A
TRS6E65C,S1AQ DIODE SCHOTTKY 650V 6A TO220-2L
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