TS13002A

TS13002ACT A3G vs TS13002ACT B0G

 
PartNumberTS13002ACT A3GTS13002ACT B0G
DescriptionBipolar Transistors - BJT NPN 700V 0.3A High Voltage/SpeedBipolar Transistors - BJT TO-92, 700V 0.3A NPN Bplr Trans
ManufacturerTaiwan SemiconductorTaiwan Semiconductor
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT
RoHSY-
TechnologySi-
Mounting StyleThrough Hole-
Package / CaseTO-92-3-
Transistor PolarityNPN-
ConfigurationSingle-
Collector Emitter Voltage VCEO Max400 V-
Collector Base Voltage VCBO700 V-
Emitter Base Voltage VEBO9 V-
Collector Emitter Saturation Voltage1.5 V-
Maximum DC Collector Current0.3 A-
Gain Bandwidth Product fT4 MHz-
Minimum Operating Temperature- 55 C-
Maximum Operating Temperature+ 150 C-
DC Current Gain hFE Max24-
PackagingAmmo Pack-
BrandTaiwan SemiconductorTaiwan Semiconductor
Continuous Collector Current0.3 A-
DC Collector/Base Gain hfe Min12-
Pd Power Dissipation0.6 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors
Factory Pack Quantity2000-
SubcategoryTransistorsTransistors
Series-TS13002ACT
Manufacturer Part # Description RFQ
Taiwan Semiconductor
Taiwan Semiconductor
TS13002ACT A3G Bipolar Transistors - BJT NPN 700V 0.3A High Voltage/Speed
TS13002ACT B0G Bipolar Transistors - BJT TO-92, 700V 0.3A NPN Bplr Trans
TS13002ACT B0G TRANSISTOR, NPN, 400V, 0.3A, 20A
TS13002ACT A3G Bipolar Transistors - BJT NPN 700V 0.3A High Voltage/Speed
TS13002ACTA3 Small Signal Bipolar Transistor, 0.3A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
TS13002ACTA3G New and Original
TS13002ACT Bipolar Transistors - BJT NPN 700V 0.3A High Voltage/Speed
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