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| PartNumber | TS13003HVCT A3G | TS13003HVCT B0G | TS13003HVCT |
| Description | Bipolar Transistors - BJT NPN 900V 1.5A High Voltage/Speed | ||
| Manufacturer | - | - | Taiwan Semiconductor |
| Product Category | - | - | Transistors - Bipolar (BJT) - RF |
| Packaging | - | - | Ammo Pack |
| Part Aliases | - | - | A3G |
| Unit Weight | - | - | 0.016000 oz |
| Mounting Style | - | - | Through Hole |
| Package Case | - | - | TO-92-3 |
| Configuration | - | - | Single |
| Pd Power Dissipation | - | - | 1960 mW |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Collector Emitter Voltage VCEO Max | - | - | 530 V |
| Transistor Polarity | - | - | NPN |
| Collector Base Voltage VCBO | - | - | 900 V |
| Emitter Base Voltage VEBO | - | - | 10 V |
| Maximum DC Collector Current | - | - | 1.5 A |
| Gain Bandwidth Product fT | - | - | 4 MHz |
| DC Collector Base Gain hfe Min | - | - | 15 at 10 mA at 10 V 20 at 400 mA at 10 V 6 at 1 A at 10 V |
| DC Current Gain hFE Max | - | - | 15 at 10 mA at 10 V |