PartNumber | TSM10N80CI C0G | TSM10NC60CF C0G | TSM10N80CZ C0G |
Description | MOSFET 800V 10A N Channel Power Mosfet | MOSFET 650V, 10A, 0.75 Single N-Channel Power MOSFET | MOSFET 800V 10Amp N channel Mosfet |
Manufacturer | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | ITO-220-3 | ITO-220S-3 | TO-220-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 800 V | 600 V | 800 V |
Id Continuous Drain Current | 9.5 A | 10 A | 9.5 A |
Rds On Drain Source Resistance | 900 mOhms | 670 mOhms | 900 mOhms |
Vgs th Gate Source Threshold Voltage | 2 V | 2.5 V | 2 V |
Vgs Gate Source Voltage | 10 V | 10 V | 10 V |
Qg Gate Charge | 53 nC | 33 nC | 53 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Tube | Tube | Tube |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
Forward Transconductance Min | 6.3 S | - | - |
Fall Time | 72 ns | 21 ns | 72 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 62 ns | 21 ns | 62 ns |
Factory Pack Quantity | 2000 | 2000 | 2000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 256 ns | 29 ns | 256 ns |
Typical Turn On Delay Time | 63 ns | 14 ns | 63 ns |
Unit Weight | 0.211644 oz | 0.059966 oz | 0.063493 oz |
Pd Power Dissipation | - | 45 W | 290 W |