PartNumber | TSM1NB60CP ROG | TSM1NB60CW RPG | TSM1NB60CH C5G |
Description | MOSFET 600V 1A N Channel Mosfet | MOSFET 600V 1Amp N channel Mosfet | MOSFET 600V 1A N Channel Mosfet |
Manufacturer | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | Through Hole |
Package / Case | TO-252-3 | SOT-223-3 | TO-251-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
Id Continuous Drain Current | 1 A | 1 A | 1 A |
Rds On Drain Source Resistance | 8 Ohms | 8 Ohms | 8 Ohms |
Vgs th Gate Source Threshold Voltage | 2.5 V | 2.5 V | 2.5 V |
Vgs Gate Source Voltage | 10 V | 10 V | 10 V |
Qg Gate Charge | 6.1 nC | 6.1 nC | 6.1 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 39 W | 2.1 W | 39 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Reel | Reel | Tube |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
Forward Transconductance Min | 0.8 S | - | 0.8 S |
Fall Time | 14.9 ns | 14.9 ns | 14.9 ns |
Moisture Sensitive | Yes | Yes | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 6.8 ns | 6.8 ns | 6.8 ns |
Factory Pack Quantity | 2500 | 2500 | 3750 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 15.3 ns | 15.3 ns | 15.3 ns |
Typical Turn On Delay Time | 7.7 ns | 7.7 ns | 7.7 ns |
Unit Weight | 0.011993 oz | 0.009171 oz | 0.012102 oz |