TSM2301B

TSM2301BCX vs TSM2301BCX RFG vs TSM2301BCX RF

 
PartNumberTSM2301BCXTSM2301BCX RFGTSM2301BCX RF
DescriptionMOSFET 20V P channel MOSFETMOSFET 20V P channel Mosfet
ManufacturerTaiwan Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current2.8 A--
Rds On Drain Source Resistance80 mOhms--
Vgs th Gate Source Threshold Voltage450 mV--
Vgs Gate Source Voltage4.5 V--
Qg Gate Charge5.8 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation900 mW--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Transistor Type1 P-Channel--
TypeP-Channel--
BrandTaiwan Semiconductor--
Forward Transconductance Min6.5 S--
Fall Time34 ns--
Product TypeMOSFET--
Rise Time36 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time42 ns--
Typical Turn On Delay Time13 ns--
Unit Weight0.000282 oz--
Manufacturer Part # Description RFQ
Taiwan Semiconductor
Taiwan Semiconductor
TSM2301BCX MOSFET 20V P channel MOSFET
TSM2301BCX RFG MOSFET 20V P channel Mosfet
TSM2301BCX MOSFET 20V P channel MOSFET
TSM2301BCX RF New and Original
TSM2301BCXRF New and Original
TSM2301BCXRFG New and Original
Top