PartNumber | TSM4NB65CP ROG | TSM4NB65CI C0G | TSM4NB65CH C5G |
Description | MOSFET 650V N channel Mosfet | MOSFET 650V N channel Mosfet | MOSFET 650V N channel Mosfet |
Manufacturer | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | Through Hole | Through Hole |
Package / Case | TO-252-3 | ITO-220-3 | TO-251-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 650 V | 650 V | 650 V |
Id Continuous Drain Current | 4 A | 4 A | 4 A |
Rds On Drain Source Resistance | 2.7 Ohms | 2.7 Ohms | 2.7 Ohms |
Vgs th Gate Source Threshold Voltage | 3.6 V | 3.6 V | 3.6 V |
Vgs Gate Source Voltage | 10 V | 10 V | 10 V |
Qg Gate Charge | 13.46 nC | 13.46 nC | 13.46 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 50 W | 25 W | 50 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Reel | Reel | Reel |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
Fall Time | 19 ns | 19 ns | 19 ns |
Moisture Sensitive | Yes | - | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 20 ns | 20 ns | 20 ns |
Factory Pack Quantity | 2500 | 1000 | 1875 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 30 ns | 30 ns | 30 ns |
Typical Turn On Delay Time | 11 ns | 11 ns | 11 ns |
Unit Weight | 0.011993 oz | 0.059966 oz | 0.011993 oz |