TSM7N9

TSM7N90CZ C0G vs TSM7N90CI C0G

 
PartNumberTSM7N90CZ C0GTSM7N90CI C0G
DescriptionMOSFET 900V 7Amp N channel MosfetMOSFET 900V 7A N Channel Power Mosfet
ManufacturerTaiwan SemiconductorTaiwan Semiconductor
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleThrough HoleThrough Hole
Package / CaseTO-220-3ITO-220-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage900 V900 V
Id Continuous Drain Current7 A7 A
Rds On Drain Source Resistance1.52 Ohms1.52 Ohms
Vgs th Gate Source Threshold Voltage2 V2 V
Vgs Gate Source Voltage10 V10 V
Qg Gate Charge49 nC49 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation250 W40.3 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
PackagingTubeTube
Transistor Type1 N-Channel1 N-Channel
BrandTaiwan SemiconductorTaiwan Semiconductor
Fall Time45 ns45 ns
Product TypeMOSFETMOSFET
Rise Time38 ns38 ns
Factory Pack Quantity20002000
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time155 ns155 ns
Typical Turn On Delay Time39 ns39 ns
Unit Weight0.063493 oz0.211644 oz
Forward Transconductance Min-7 S
Manufacturer Part # Description RFQ
Taiwan Semiconductor
Taiwan Semiconductor
TSM7N90CZ C0G MOSFET 900V 7Amp N channel Mosfet
TSM7N90CI C0G MOSFET 900V 7A N Channel Power Mosfet
TSM7N90CI C0G MOSFET 900V 7A N Channel Power Mosfet
TSM7N90CZ C0G N-Channel Power MOSFET
TSM7N90CIC0G Power Field-Effect Transisto
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