| PartNumber | TSM900N06CW RPG | TSM900N06CH X0G | TSM900N06CP ROG |
| Description | MOSFET 60V 11A N Channel Power Mosfet | MOSFET 60V 11A N Channel Power Mosfet | MOSFET 60V 11A N Channel Power Mosfet |
| Manufacturer | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | Through Hole | SMD/SMT |
| Package / Case | SOT-223-3 | TO-251S-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | 60 V |
| Id Continuous Drain Current | 11 A | 11 A | 11 A |
| Rds On Drain Source Resistance | 76 mOhms | 76 mOhms | 76 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 1.2 V | 1.2 V |
| Vgs Gate Source Voltage | 10 V | 10 V | 10 V |
| Qg Gate Charge | 9.3 nC | 9.3 nC | 9.3 nC |
| Minimum Operating Temperature | - | - | - |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 4.7 W | 25 W | 25 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Tube | Reel |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
| Fall Time | 5.3 ns | 5.3 ns | 5.3 ns |
| Moisture Sensitive | Yes | - | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 9.5 ns | 9.5 ns | 9.5 ns |
| Factory Pack Quantity | 2500 | 3750 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 18.4 ns | 18.4 ns | 18.4 ns |
| Typical Turn On Delay Time | 2.9 ns | 2.9 ns | 2.9 ns |
| Unit Weight | 0.009171 oz | 0.011993 oz | 0.011993 oz |