TT8K2

TT8K2TR vs TT8K2 vs TT8K2 TR

 
PartNumberTT8K2TRTT8K2TT8K2 TR
DescriptionMOSFET SW MOSFET MIDDLE PWR N-CH 30V2.5A
ManufacturerROHM SemiconductorRohm Semiconductor-
Product CategoryMOSFETFETs - Arrays-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTSST-8--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current2.5 A--
Rds On Drain Source Resistance90 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Qg Gate Charge3.2 nC--
Pd Power Dissipation1.25 W--
ConfigurationSingle--
PackagingReelDigi-ReelR Alternate Packaging-
Transistor Type1 N-Channel1 N-Channel-
BrandROHM Semiconductor--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Part # AliasesTT8K2--
Series-TT8K2-
Package Case-8-SMD, Flat Lead-
Operating Temperature-150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-8-TSST-
FET Type-2 N-Channel (Dual)-
Power Max-1.25W-
Drain to Source Voltage Vdss-30V-
Input Capacitance Ciss Vds-180pF @ 10V-
FET Feature-Logic Level Gate-
Current Continuous Drain Id 25°C-2.5A-
Rds On Max Id Vgs-90 mOhm @ 2.5A, 4.5V-
Vgs th Max Id-1.5V @ 1mA-
Gate Charge Qg Vgs-3.2nC @ 4.5V-
Pd Power Dissipation-1.25 W-
Id Continuous Drain Current-2.5 A-
Vds Drain Source Breakdown Voltage-30 V-
Vgs th Gate Source Threshold Voltage-1.5 V-
Rds On Drain Source Resistance-90 mOhms-
Qg Gate Charge-3.2 nC-
Manufacturer Part # Description RFQ
TT8K2TR MOSFET SW MOSFET MIDDLE PWR N-CH 30V2.5A
TT8K2TR MOSFET SW MOSFET MIDDLE PWR N-CH 30V2.5A
TT8K2 New and Original
TT8K2 TR New and Original
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