PartNumber | TT8M1TR | TT8M1 TR | TT8M11TCR |
Description | MOSFET 1.5V Drive Nch+Pch MOSFET | ||
Manufacturer | ROHM Semiconductor | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | TSST-8 | - | - |
Number of Channels | 2 Channel | - | - |
Transistor Polarity | N-Channel, P-Channel | - | - |
Vds Drain Source Breakdown Voltage | 20 V | - | - |
Id Continuous Drain Current | 2.5 A | - | - |
Rds On Drain Source Resistance | 52 mOhms, 49 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 300 mV, 1 V | - | - |
Vgs Gate Source Voltage | 10 V | - | - |
Qg Gate Charge | 3.6 nC, 12 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 1.25 W | - | - |
Configuration | Dual | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Reel | - | - |
Transistor Type | 1 N-Channel, 1 P-Channel | - | - |
Brand | ROHM Semiconductor | - | - |
Fall Time | 17 ns, 85 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 17 ns, 30 ns | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 28 ns, 120 ns | - | - |
Typical Turn On Delay Time | 9 ns, 9 ns | - | - |
Part # Aliases | TT8M1 | - | - |