 |  | | |
| PartNumber | TTA004B,Q | TTA004B | TTA004B,Q(S |
| Description | Bipolar Transistors - BJT PNP -2.5A 1.5W 280 HFE -0.5V Trans | Bipolar Transistors | |
| Manufacturer | Toshiba | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-126N-3 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | - 160 V | - | - |
| Collector Base Voltage VCBO | - 160 V | - | - |
| Emitter Base Voltage VEBO | - 6 V | - | - |
| Collector Emitter Saturation Voltage | - 500 mV | - | - |
| Maximum DC Collector Current | - 1.5 A | - | - |
| Gain Bandwidth Product fT | 100 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | TTA004B | - | - |
| DC Current Gain hFE Max | 280 | - | - |
| Brand | Toshiba | - | - |
| Continuous Collector Current | - 1.5 A | - | - |
| DC Collector/Base Gain hfe Min | 140 | - | - |
| Pd Power Dissipation | 1.5 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 250 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.165788 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Toshiba |
TTA004B,Q | Bipolar Transistors - BJT PNP -2.5A 1.5W 280 HFE -0.5V Trans | |
| TTA004BQ-ND | New and Original | ||
| TTA004B | New and Original | ||
| TTA004B,Q | Bipolar Transistors | ||
| TTA004B,Q(S | Bipolar Transistors | ||
| TTA004BQ | X35 Pb-F POWER TRANSISTOR TO-126N MOQ=250 PC=10W F=1MHZ - Rail/Tube (Alt: TTA004B,Q) |