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| PartNumber | UPA812T-A | UPA812T-T1 | UPA812T |
| Description | RF Bipolar Transistors NPN High Frequency | RF Bipolar Transistors NPN High Frequency | RF Bipolar Transistors NPN High Frequency |
| Manufacturer | CEL | NEC | - |
| Product Category | RF Bipolar Transistors | RF Transistors (BJT) | - |
| RoHS | Y | - | - |
| Transistor Type | Bipolar | - | - |
| Technology | Si | - | - |
| Transistor Polarity | NPN | - | - |
| DC Collector/Base Gain hfe Min | 70 | - | - |
| Collector Emitter Voltage VCEO Max | 10 V | - | - |
| Emitter Base Voltage VEBO | 1.5 V | - | - |
| Continuous Collector Current | 0.065 A | - | - |
| Configuration | Single | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SO-6 | - | - |
| Type | RF Bipolar Small Signal | - | - |
| Brand | CEL | - | - |
| Pd Power Dissipation | 110 mW, 200 mW | - | - |
| Product Type | RF Bipolar Transistors | - | - |
| Factory Pack Quantity | 1 | - | - |
| Subcategory | Transistors | - | - |