US6M2T

US6M2TR vs US6M2TR , MAX6755UKTD3

 
PartNumberUS6M2TRUS6M2TR , MAX6755UKTD3
DescriptionMOSFET N+P 20V 1.5A/1A
ManufacturerROHM Semiconductor-
Product CategoryMOSFET-
RoHSY-
TechnologySi-
Mounting StyleSMD/SMT-
Package / CaseSOT-363T-6-
Number of Channels2 Channel-
Transistor PolarityN-Channel, P-Channel-
Vds Drain Source Breakdown Voltage20 V, 30 V-
Id Continuous Drain Current1 A, 1.5 A-
Rds On Drain Source Resistance240 mOhms, 390 mOhms-
Vgs th Gate Source Threshold Voltage700 mV, 500 mV-
Vgs Gate Source Voltage4.5 V-
Qg Gate Charge1.6 nC, 2.1 nC-
Maximum Operating Temperature+ 150 C-
Pd Power Dissipation1 W-
ConfigurationDual-
Channel ModeEnhancement-
PackagingReel-
Height0.77 mm-
Length2 mm-
SeriesUS6M2-
Transistor Type1 N-Channel MOSFET, 1 P-Channel MOSFET-
TypeMOSFET-
Width1.7 mm-
BrandROHM Semiconductor-
Fall Time6 ns, 10 ns-
Product TypeMOSFET-
Rise Time9 ns, 8 ns-
Factory Pack Quantity3000-
SubcategoryMOSFETs-
Typical Turn Off Delay Time15 ns, 25 ns-
Typical Turn On Delay Time7 ns, 9 ns-
Part # AliasesUS6M2-
Unit Weight0.000265 oz-
Manufacturer Part # Description RFQ
US6M2TR MOSFET N+P 20V 1.5A/1A
US6M2TR MOSFET N/P-CH 30V/20V TUMT6
US6M2TR , MAX6755UKTD3 New and Original
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