PartNumber | VMMK-1218-BLKG | VMMK-1218-TR1G |
Description | RF JFET Transistors LNA FET in Microcap DC-18GHz | RF JFET Transistors LNA FET in Microcap DC-18GHz |
Manufacturer | Broadcom Limited | Broadcom Limited |
Product Category | RF JFET Transistors | RF JFET Transistors |
RoHS | Y | Y |
Transistor Type | EpHEMT | EpHEMT |
Technology | GaAs | GaAs |
Gain | 9 dB | 9 dB |
Vds Drain Source Breakdown Voltage | 5 V | 5 V |
Vgs Gate Source Breakdown Voltage | - 5 V to 1 V | - 5 V to 1 V |
Id Continuous Drain Current | 100 mA | 100 mA |
Maximum Operating Temperature | + 150 C | + 150 C |
Pd Power Dissipation | 300 mW | 300 mW |
Mounting Style | SMD/SMT | SMD/SMT |
Packaging | Bulk | Reel |
Configuration | Single | Single |
Operating Frequency | 10 GHz | 10 GHz |
Product | RF JFET | RF JFET |
Type | GaAs EpHEMT | GaAs EpHEMT |
Brand | Broadcom / Avago | Broadcom / Avago |
Forward Transconductance Min | 200 mS | 200 mS |
Moisture Sensitive | Yes | - |
NF Noise Figure | 0.81 dB | 0.81 dB |
P1dB Compression Point | 12 dBm | 12 dBm |
Product Type | RF JFET Transistors | RF JFET Transistors |
Factory Pack Quantity | 100 | 5000 |
Subcategory | Transistors | Transistors |
Unit Weight | 0.007690 oz | - |