PartNumber | VN2210N2 | VN2110K1-G | VN2106N3-G P013 |
Description | MOSFET 100V 0.35Ohm | MOSFET 100V 4Ohm | MOSFET N-CH Enhancmnt Mode MOSFET |
Manufacturer | Microchip | Microchip | Microchip |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | T | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | SMD/SMT | Through Hole |
Package / Case | TO-39-3 | SOT-23-3 | TO-92-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 100 V | 100 V | 60 V |
Id Continuous Drain Current | 1.7 A | 200 mA | 300 mA |
Rds On Drain Source Resistance | 350 mOhms | 4 Ohms | 6 Ohms |
Vgs Gate Source Voltage | 20 V | 10 V | 20 V |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 6 W | 360 mW | 1 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Bulk | Reel | Reel |
Height | 6.6 mm | - | 5.33 mm |
Length | 9.4 mm | - | 5.21 mm |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Type | FET | - | - |
Width | 9.4 mm | - | 4.19 mm |
Brand | Microchip Technology | Microchip Technology | Microchip Technology |
Fall Time | 30 ns | 5 ns | 5 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 10 ns | 5 ns | 5 ns |
Factory Pack Quantity | 500 | 3000 | 2000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 50 ns | 6 ns | 6 ns |
Typical Turn On Delay Time | 10 ns | 3 ns | 3 ns |
Unit Weight | 0.039133 oz | 0.000282 oz | 0.016000 oz |
Vgs th Gate Source Threshold Voltage | - | 800 mV | - |
Product | - | MOSFET Small Signal | MOSFET Small Signal |
Forward Transconductance Min | - | 150 mS | - |