PartNumber | VN2106N3-G | VN2106N3-G P005 | VN2106N3 |
Description | MOSFET 60V 4Ohm | MOSFET N-CH Enhancmnt Mode MOSFET | MOSFET 60V 4Ohm |
Manufacturer | Microchip | Microchip | Microchip Technology |
Product Category | MOSFET | MOSFET | FETs - Single |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-92-3 | TO-92-3 | - |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
Id Continuous Drain Current | 300 mA | 300 mA | - |
Rds On Drain Source Resistance | 4 Ohms | 6 Ohms | - |
Vgs Gate Source Voltage | 20 V | - | - |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Pd Power Dissipation | 1 W | - | - |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Bulk | Reel | Bulk |
Height | 5.33 mm | - | - |
Length | 5.21 mm | - | - |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Type | FET | - | - |
Width | 4.19 mm | - | - |
Brand | Microchip Technology | Microchip Technology | - |
Fall Time | 5 ns | - | 5 ns |
Product Type | MOSFET | MOSFET | - |
Rise Time | 5 ns | - | 5 ns |
Factory Pack Quantity | 1000 | 2000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 6 ns | - | 6 ns |
Typical Turn On Delay Time | 3 ns | - | 3 ns |
Unit Weight | 0.016000 oz | 0.016000 oz | 0.016000 oz |
Series | - | - | - |
Package Case | - | - | TO-226-3, TO-92-3 (TO-226AA) |
Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
Mounting Type | - | - | Through Hole |
Supplier Device Package | - | - | TO-92-3 |
FET Type | - | - | MOSFET N-Channel, Metal Oxide |
Power Max | - | - | 1W |
Drain to Source Voltage Vdss | - | - | 60V |
Input Capacitance Ciss Vds | - | - | 50pF @ 25V |
FET Feature | - | - | Standard |
Current Continuous Drain Id 25°C | - | - | 300mA (Tj) |
Rds On Max Id Vgs | - | - | 4 Ohm @ 500mA, 10V |
Vgs th Max Id | - | - | 2.4V @ 1mA |
Gate Charge Qg Vgs | - | - | - |
Pd Power Dissipation | - | - | 1 W |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 300 mA |
Vds Drain Source Breakdown Voltage | - | - | 60 V |
Rds On Drain Source Resistance | - | - | 4 Ohms |