VN2210

VN2210N2 vs VN2210 vs VN2210N3

 
PartNumberVN2210N2VN2210VN2210N3
DescriptionMOSFET 100V 0.35OhmTransistor: N-MOSFET, unipolar, 100V, 8A, 740mW, TO92MOSFET 100V 0.35Ohm
ManufacturerMicrochip--
Product CategoryMOSFET--
RoHST--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-39-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current1.7 A--
Rds On Drain Source Resistance350 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation6 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingBulk--
Height6.6 mm--
Length9.4 mm--
Transistor Type1 N-Channel--
TypeFET--
Width9.4 mm--
BrandMicrochip Technology--
Fall Time30 ns--
Product TypeMOSFET--
Rise Time10 ns--
Factory Pack Quantity500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time50 ns--
Typical Turn On Delay Time10 ns--
Unit Weight0.039133 oz--
Manufacturer Part # Description RFQ
Microchip Technology
Microchip Technology
VN2210N2 MOSFET 100V 0.35Ohm
VN2210N3-G MOSFET 100V 0.35Ohm
VN2210 Transistor: N-MOSFET, unipolar, 100V, 8A, 740mW, TO92
VN2210N3 MOSFET 100V 0.35Ohm
VN2210N3-G MOSFET N-CH 100V 1.2A TO92-3
VN2210N2 MOSFET N-CH 100V 1.7A TO39-3
VN2210N3-G P002 RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
VN2210N3-G P014 RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
VN2210N3-G P003 RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
VN2210N3-G P005 RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
VN2210N3-G P013 RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
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