PartNumber | VP0808L-G P005 | VP0808L-G P003 | VP0808L-G |
Description | MOSFET N-CH Enhancmnt Mode MOSFET | MOSFET N-CH Enhancmnt Mode MOSFET | MOSFET 80V 5Ohm |
Manufacturer | Microchip | Microchip | Microchip |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-92-3 | TO-92-3 | TO-92-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | P-Channel | P-Channel | P-Channel |
Vds Drain Source Breakdown Voltage | 80 V | 80 V | 80 V |
Id Continuous Drain Current | 280 mA | 280 mA | 280 mA |
Rds On Drain Source Resistance | 5 Ohms | 5 Ohms | 5 Ohms |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Reel | Reel | Bulk |
Transistor Type | 1 P-Channel | 1 P-Channel | 1 P-Channel |
Brand | Microchip Technology | Microchip Technology | Microchip Technology |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 2000 | 2000 | 1000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.016000 oz | 0.016000 oz | 0.016000 oz |
Vgs Gate Source Voltage | - | 30 V | 10 V |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Pd Power Dissipation | - | 1 W | 1 W |
Height | - | 5.33 mm | 5.33 mm |
Length | - | 5.21 mm | 5.21 mm |
Product | - | MOSFET Small Signal | - |
Width | - | 4.19 mm | 4.19 mm |
Fall Time | - | 30 ns | 30 ns |
Rise Time | - | 40 ns | 40 ns |
Typical Turn Off Delay Time | - | 30 ns | 30 ns |
Typical Turn On Delay Time | - | 15 ns | 15 ns |
Vgs th Gate Source Threshold Voltage | - | - | 1 V |
Type | - | - | FET |
Forward Transconductance Min | - | - | 200 mS |