VP3203N3

VP3203N3-G vs VP3203N3-G P002 vs VP3203N3

 
PartNumberVP3203N3-GVP3203N3-G P002VP3203N3
DescriptionMOSFET 30V 0.6OhmMOSFET P-CH Enhancmnt Mode MOSFETMOSFET 30V 0.6Ohm
ManufacturerMicrochipMicrochipSUPERTEX
Product CategoryMOSFETMOSFETFETs - Single
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-92-3TO-92-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current650 mA650 mA-
Rds On Drain Source Resistance1 Ohms1 Ohms-
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage4.5 V20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation740 mW740 mW-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingBulkReel-
Height5.33 mm5.33 mm-
Length5.21 mm5.21 mm-
ProductMOSFET Small SignalMOSFET Small Signal-
Transistor Type1 P-Channel1 P-Channel-
TypeFET--
Width4.19 mm4.19 mm-
BrandMicrochip TechnologyMicrochip Technology-
Forward Transconductance Min1000 mmho--
Fall Time25 ns25 ns-
Product TypeMOSFETMOSFET-
Rise Time15 ns15 ns-
Factory Pack Quantity10002000-
SubcategoryMOSFETsMOSFETs-
Unit Weight0.016000 oz0.016000 oz-
Typical Turn Off Delay Time-25 ns-
Typical Turn On Delay Time-10 ns-
Manufacturer Part # Description RFQ
Microchip Technology
Microchip Technology
VP3203N3-G MOSFET 30V 0.6Ohm
VP3203N3-G P002 MOSFET P-CH Enhancmnt Mode MOSFET
VP3203N3-G P003 MOSFET N-CH Enhancmnt Mode MOSFET
VP3203N3 MOSFET 30V 0.6Ohm
VP3203N3-G MOSFET P-CH 30V 650MA TO92-3
VP3203N3P013 INSTOCK
VP3203N3-G P014 RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
VP3203N3-G P013 RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
VP3203N3-G P005 RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
VP3203N3-G P003 RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
VP3203N3-G P002 RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
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