PartNumber | VS-GB100TS60NPBF | VS-GB100TH120N | VS-GB100TP120N |
Description | IGBT Modules 108 Amp 600 Volt Half-Bridge | IGBT Modules Output & SW Modules - DIAP IGBT | IGBT Modules Output & SW Modules - IAP IGBT |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | IGBT Modules | IGBT Modules | IGBT Modules |
RoHS | Y | - | - |
Product | IGBT Silicon Modules | - | - |
Configuration | Dual | Half Bridge | Half Bridge |
Collector Emitter Voltage VCEO Max | 600 V | 1.2 kV | 1.2 kV |
Continuous Collector Current at 25 C | 108 A | 200 A | 200 A |
Package / Case | INT-A-PAK | INT-A-PAK | INT-A-PAK |
Minimum Operating Temperature | - 40 C | - | - |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Packaging | Bulk | - | - |
Height | 30 mm | - | - |
Length | 94 mm | - | - |
Width | 35 mm | - | - |
Brand | Vishay Semiconductors | Vishay Semiconductors | Vishay Semiconductors |
Mounting Style | Chassis Mount | Chassis Mount | Chassis Mount |
Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
Product Type | IGBT Modules | IGBT Modules | IGBT Modules |
Factory Pack Quantity | 15 | 12 | 24 |
Subcategory | IGBTs | IGBTs | IGBTs |
Tradename | HEXFRED | - | - |
Part # Aliases | GB100TS60NPBF | - | - |
Unit Weight | 7.054792 oz | - | - |
Collector Emitter Saturation Voltage | - | 1.9 V | 1.8 V |
Gate Emitter Leakage Current | - | 400 nA | 400 nA |
Pd Power Dissipation | - | 833 W | 650 W |