VS-GB4

VS-GB400AH120N vs VS-GB400AH120U vs VS-GB400TH120N

 
PartNumberVS-GB400AH120NVS-GB400AH120UVS-GB400TH120N
DescriptionIGBT Modules Output & SW Modules - DIAP IGBTIGBT 1200V 550A 2841W INT-A-PAKTrans IGBT Module N-CH 1.2KV 800A 7-Pin Double INT-A-PAK
ManufacturerVishay--
Product CategoryIGBT Modules--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max1.2 kV--
Collector Emitter Saturation Voltage1.9 V--
Continuous Collector Current at 25 C650 A--
Gate Emitter Leakage Current400 nA--
Pd Power Dissipation2.5 kW--
Package / CaseINT-A-PAK--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
BrandVishay Semiconductors--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity12--
SubcategoryIGBTs--
Manufacturer Part # Description RFQ
Vishay Semiconductors
Vishay Semiconductors
VS-GB400TH120U IGBT Modules Output & SW Modules - DIAP IGBT
VS-GB400AH120N IGBT Modules Output & SW Modules - DIAP IGBT
Vishay
Vishay
VS-GB400AH120N Trans IGBT Module N-CH 1.2KV 650A 4-Pin Double INT-A-PAK
VS-GB400AH120U IGBT 1200V 550A 2841W INT-A-PAK
VS-GB400TH120N Trans IGBT Module N-CH 1.2KV 800A 7-Pin Double INT-A-PAK
VS-GB400TH120U IGBT 1200V 660A 2660W INT-A-PAK
Top