PartNumber | VS-GB50YF120N | VS-GB50LP120N | VS-GB50TP120N |
Description | IGBT Modules 1200 Volt 50 Amp | IGBT Modules Output & SW Modules - IAP IGBT | IGBT Modules Output & SW Modules - IAP IGBT |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | IGBT Modules | IGBT Modules | IGBT Modules |
RoHS | N | - | - |
Product | IGBT Silicon Modules | - | - |
Configuration | Quad | - | Half Bridge |
Collector Emitter Voltage VCEO Max | 1200 V | 1.2 kV | 1.2 kV |
Continuous Collector Current at 25 C | 66 A | 100 A | 100 A |
Package / Case | ECONO2 4PAK | INT-A-PAK | INT-A-PAK |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Packaging | Bulk | - | - |
Height | 13.2 mm | - | - |
Length | 107.8 mm | - | - |
Width | 45.4 mm | - | - |
Brand | Vishay Semiconductors | Vishay Semiconductors | Vishay Semiconductors |
Mounting Style | Chassis Mount | Chassis Mount | Chassis Mount |
Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
Product Type | IGBT Modules | IGBT Modules | IGBT Modules |
Factory Pack Quantity | 12 | 24 | 24 |
Subcategory | IGBTs | IGBTs | IGBTs |
Part # Aliases | GB50YF120N | - | - |
Unit Weight | 6 oz | - | - |
Collector Emitter Saturation Voltage | - | 1.7 V | 1.75 V |
Gate Emitter Leakage Current | - | 400 nA | 400 nA |
Pd Power Dissipation | - | 446 W | 446 W |
Minimum Operating Temperature | - | - 40 C | - |