ZDT671

ZDT6718TA vs ZDT6718TC vs ZDT6718

 
PartNumberZDT6718TAZDT6718TCZDT6718
DescriptionBipolar Transistors - BJT NPN/PNP Darl 20VTRANS NPN/PNP 20V 2A/1.5A SM8
ManufacturerDiodes Incorporated-Diodes Incorporated
Product CategoryBipolar Transistors - BJT-Transistors (BJT) - Arrays
RoHSY--
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseSM-8--
Transistor PolarityNPN, PNP-NPN PNP
ConfigurationDual-Dual
Collector Emitter Voltage VCEO Max20 V--
Collector Base Voltage VCBO20 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage200 mV, 220 mV-200 mV 220 mV
Maximum DC Collector Current2 A, 1.5 A-2 A 1.5 A
Gain Bandwidth Product fT140 MHz, 180 MHz-140 MHz 180 MHz
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
SeriesZDT6718-ZDT6718
DC Current Gain hFE Max475-475
Height1.6 mm--
Length6.7 mm--
PackagingReel-Cut Tape (CT) Alternate Packaging
Width3.7 mm--
BrandDiodes Incorporated--
Continuous Collector Current2 A-2 A
DC Collector/Base Gain hfe Min300--
Pd Power Dissipation2.5 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Package Case--SOT-223-8
Mounting Type--Surface Mount
Supplier Device Package--SM8
Power Max--2.5W
Transistor Type--NPN, PNP
Current Collector Ic Max--2A, 1.5A
Voltage Collector Emitter Breakdown Max--20V
DC Current Gain hFE Min Ic Vce--300 @ 200mA, 2V / 300 @ 100mA, 2V
Vce Saturation Max Ib Ic--200mV @ 50mA, 2.5A / 220mV @ 50mA, 1.5A
Current Collector Cutoff Max--100nA
Frequency Transition--140MHz, 180MHz
Pd Power Dissipation--2.5 W
Collector Emitter Voltage VCEO Max--20 V
Collector Base Voltage VCBO--20 V
Emitter Base Voltage VEBO--5 V
DC Collector Base Gain hfe Min--300
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
ZDT6718TA Bipolar Transistors - BJT NPN/PNP Darl 20V
ZDT6718TC TRANS NPN/PNP 20V 2A/1.5A SM8
ZDT6718TA TRANS NPN/PNP 20V 2A/1.5A SM8
ZDT6718 New and Original
Top