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ZTX1147

ZTX1147A vs ZTX1147ASTOB vs ZTX1147ASTOA

 
PartNumberZTX1147AZTX1147ASTOBZTX1147ASTOA
DescriptionBipolar Transistors - BJT PNP High Gain & CrntBipolar Transistors - BJT PNP High Gain & CrntBipolar Transistors - BJT PNP High Gain & Crnt
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-92-3TO-92-3-
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max- 12 V- 12 V-
Collector Base Voltage VCBO- 15 V- 15 V-
Emitter Base Voltage VEBO- 5 V- 5 V-
Collector Emitter Saturation Voltage- 175 mV- 175 mV-
Maximum DC Collector Current4 A4 A-
Gain Bandwidth Product fT115 MHz115 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesZTX1147--
DC Current Gain hFE Max270 at 10 mA, 2 V270 at 10 mA, 2 V-
Height4.01 mm4.01 mm-
Length4.77 mm4.77 mm-
PackagingBulkBulk-
Width2.41 mm2.41 mm-
BrandDiodes IncorporatedDiodes Incorporated-
Continuous Collector Current- 4 A- 4 A-
DC Collector/Base Gain hfe Min270 at 10 mA, 2 V, 250 at 500 mA, 2 V, 200 at 2 A, 2 V, 170 at 4 A, 2 V, 90 at 10 A, 2 V270 at 10 mA, 2 V, 250 at 500 mA, 2 V, 200 at 2 A, 2 V, 170 at 4 A, 2 V, 90 at 10 A, 2 V-
Pd Power Dissipation1 W1 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity40004000-
SubcategoryTransistorsTransistors-
Unit Weight0.016000 oz0.016000 oz-
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated 		ZTX1147A Bipolar Transistors - BJT PNP High Gain & Crnt
ZTX1147ASTOB Bipolar Transistors - BJT PNP High Gain & Crnt
ZTX1147ASTOA Bipolar Transistors - BJT PNP High Gain & Crnt
ZTX1147ASTOB TRANS PNP 12V 4A E-LINE
ZTX1147A Bipolar Transistors - BJT PNP High Gain & Crnt
ZTX1147ASTZ Bipolar Transistors - BJT PNP High Gain & Crnt
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