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ZTX1147AS

ZTX1147ASTOB vs ZTX1147ASTOA vs ZTX1147ASTZ

 
PartNumberZTX1147ASTOBZTX1147ASTOAZTX1147ASTZ
DescriptionBipolar Transistors - BJT PNP High Gain & CrntBipolar Transistors - BJT PNP High Gain & CrntBipolar Transistors - BJT PNP High Gain & Crnt
ManufacturerDiodes Incorporated-Diodes Incorporated
Product CategoryBipolar Transistors - BJT-Transistors - Bipolar (BJT) - RF
RoHSY--
Mounting StyleThrough Hole-Through Hole
Package / CaseTO-92-3--
Transistor PolarityPNP-PNP
ConfigurationSingle-Single
Collector Emitter Voltage VCEO Max- 12 V--
Collector Base Voltage VCBO- 15 V--
Emitter Base Voltage VEBO- 5 V--
Collector Emitter Saturation Voltage- 175 mV-- 175 mV
Maximum DC Collector Current4 A-4 A
Gain Bandwidth Product fT115 MHz-115 MHz
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
DC Current Gain hFE Max270 at 10 mA, 2 V-270 at 10 mA at 2 V
Height4.01 mm--
Length4.77 mm--
PackagingBulk-Reel
Width2.41 mm--
BrandDiodes Incorporated--
Continuous Collector Current- 4 A-- 4 A
DC Collector/Base Gain hfe Min270 at 10 mA, 2 V, 250 at 500 mA, 2 V, 200 at 2 A, 2 V, 170 at 4 A, 2 V, 90 at 10 A, 2 V--
Pd Power Dissipation1 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity4000--
SubcategoryTransistors--
Unit Weight0.016000 oz-0.016000 oz
Series--ZTX1147
Package Case--TO-92
Pd Power Dissipation--1 W
Collector Emitter Voltage VCEO Max--- 12 V
Collector Base Voltage VCBO--- 15 V
Emitter Base Voltage VEBO--- 5 V
DC Collector Base Gain hfe Min--270 at 10 mA at 2 V 250 at 500 mA at 2 V 200 at 2 A at 2 V 170 at 4 A at 2 V 90 at 10 A at 2 V
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated 		ZTX1147ASTOB Bipolar Transistors - BJT PNP High Gain & Crnt
ZTX1147ASTOB TRANS PNP 12V 4A E-LINE
ZTX1147ASTOA Bipolar Transistors - BJT PNP High Gain & Crnt
ZTX1147ASTZ Bipolar Transistors - BJT PNP High Gain & Crnt
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