ZTX560S

ZTX560STZ vs ZTX560STOB vs ZTX560STOA

 
PartNumberZTX560STZZTX560STOBZTX560STOA
DescriptionBipolar Transistors - BJT PNP HighV 500VBipolar Transistors - BJT PNP HighV 500VBipolar Transistors - BJT PNP HighV 500V
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleThrough HoleThrough Hole-
Package / CaseE-Line-3E-Line-3-
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max- 500 V- 500 V-
Collector Base Voltage VCBO- 500 V- 500 V-
Emitter Base Voltage VEBO- 5 V- 5 V-
Collector Emitter Saturation Voltage- 0.5 V- 0.5 V-
Maximum DC Collector Current0.15 A0.15 A-
Gain Bandwidth Product fT60 MHz60 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesZTX560--
Height4.01 mm4.01 mm-
Length4.77 mm4.77 mm-
PackagingBulkBulk-
Width2.41 mm2.41 mm-
BrandDiodes IncorporatedDiodes Incorporated-
Continuous Collector Current- 0.15 A- 0.15 A-
Pd Power Dissipation1 W1 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity20004000-
SubcategoryTransistorsTransistors-
DC Current Gain hFE Max-100 at 1 mA, 10 V-
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
ZTX560STZ Bipolar Transistors - BJT PNP HighV 500V
ZTX560STOB Bipolar Transistors - BJT PNP HighV 500V
ZTX560STOA Bipolar Transistors - BJT PNP HighV 500V
ZTX560STOB Bipolar Transistors - BJT PNP HighV 500V
ZTX560STZ Bipolar Transistors - BJT PNP HighV 500V
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