ZTX57

ZTX576STOB vs ZTX576STZ vs ZTX576

 
PartNumberZTX576STOBZTX576STZZTX576
DescriptionBipolar Transistors - BJT PNP High VoltageBipolar Transistors - BJT PNP High VoltageBipolar Transistors - BJT PNP High Voltage
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTBipolar Transistors - BJT
RoHSYYT
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-92-3TO-92-3TO-92-3
Transistor PolarityPNPPNPPNP
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max- 200 V- 200 V- 200 V
Collector Base Voltage VCBO- 200 V- 200 V- 200 V
Emitter Base Voltage VEBO- 5 V- 5 V- 5 V
Maximum DC Collector Current1 A1 A1 A
Gain Bandwidth Product fT100 MHz100 MHz100 MHz
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
DC Current Gain hFE Max50 at 10 mA, 10 V50 at 10 mA, 10 V50 at 10 mA, 10 V
Height4.01 mm4.01 mm4.01 mm
Length4.77 mm4.77 mm4.77 mm
PackagingBulkBulkBulk
Width2.41 mm2.41 mm2.41 mm
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Continuous Collector Current- 1 A- 1 A- 1 A
Pd Power Dissipation1 W1 W1 W
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar TransistorsBJTs - Bipolar Transistors
Factory Pack Quantity400040004000
SubcategoryTransistorsTransistorsTransistors
Unit Weight0.016000 oz0.016000 oz0.016000 oz
DC Collector/Base Gain hfe Min--50 at 10 mA, 10 V, 50 at 300 mA, 10 V
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
ZTX576STOB Bipolar Transistors - BJT PNP High Voltage
ZTX576STZ Bipolar Transistors - BJT PNP High Voltage
ZTX576 Bipolar Transistors - BJT PNP High Voltage
ZTX576 TRANS PNP 200V 1A E-LINE
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