PartNumber | ZTX658 | ZTX658QSTZ | ZTX658STOA |
Description | Bipolar Transistors - BJT NPN Super E-Line | Bipolar Transistors - BJT Pwr Hi Voltage Transistor | Bipolar Transistors - BJT NPN Super E-Line |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | - | Y |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-92-3 | TO-92-3 | TO-92-3 |
Transistor Polarity | NPN | NPN | NPN |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 400 V | 400 V | 400 V |
Collector Base Voltage VCBO | 400 V | 400 V | 400 V |
Emitter Base Voltage VEBO | 5 V | 5 V | 5 V |
Collector Emitter Saturation Voltage | 0.5 V | 0.5 V | - |
Maximum DC Collector Current | 0.5 A | 500 mA | 0.5 A |
Gain Bandwidth Product fT | 50 MHz | 50 MHz | 50 MHz |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 200 C | + 150 C |
Series | ZTX658 | - | - |
DC Current Gain hFE Max | 50 at 1 mA, 5 V | - | 50 at 1 mA, 5 V |
Height | 4.01 mm | - | 4.01 mm |
Length | 4.77 mm | - | 4.77 mm |
Packaging | Bulk | Ammo Pack | Bulk |
Width | 2.41 mm | - | 2.41 mm |
Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Continuous Collector Current | 0.5 A | 500 mA | 0.5 A |
DC Collector/Base Gain hfe Min | 50 at 1 mA, 5 V, 50 at 100 mA, 5 V, 40 at 200 mA, 10 V | 40 | 50 at 1 mA, 5 V, 50 at 100 mA, 5 V, 40 at 200 mA, 10 V |
Pd Power Dissipation | 1 W | 1 W | 1 W |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 4000 | 2000 | 2000 |
Subcategory | Transistors | Transistors | Transistors |
Unit Weight | 0.016000 oz | - | 0.016000 oz |
Technology | - | Si | - |