ZVN0545GT

ZVN0545GTC vs ZVN0545GTA-CUT TAPE vs ZVN0545GTA

 
PartNumberZVN0545GTCZVN0545GTA-CUT TAPEZVN0545GTA
DescriptionMOSFET N-Chnl 450VDarlington Transistors MOSFET N-Chnl 450V
ManufacturerDiodes Incorporated-DIODES
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseSOT-223-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage450 V--
Id Continuous Drain Current140 mA--
Rds On Drain Source Resistance50 Ohms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation2 W--
ConfigurationSingle-Single Dual Drain
Channel ModeEnhancement-Enhancement
PackagingReel-Cut Tape (CT) Alternate Packaging
Transistor Type1 N-Channel-1 N-Channel
TypeFET--
BrandDiodes Incorporated--
Fall Time10 ns-10 ns
Product TypeMOSFET--
Rise Time7 ns-7 ns
Factory Pack Quantity4000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time16 ns-16 ns
Typical Turn On Delay Time7 ns-7 ns
Unit Weight0.003951 oz-0.000282 oz
Series--ZVN0545
Package Case--TO-261-4, TO-261AA
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--SOT-223
FET Type--MOSFET N-Channel, Metal Oxide
Power Max--2W
Drain to Source Voltage Vdss--450V
Input Capacitance Ciss Vds--70pF @ 25V
FET Feature--Standard
Current Continuous Drain Id 25°C--140mA (Ta)
Rds On Max Id Vgs--50 Ohm @ 100mA, 10V
Vgs th Max Id--3V @ 1mA
Gate Charge Qg Vgs---
Pd Power Dissipation--2 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--140 mA
Vds Drain Source Breakdown Voltage--450 V
Rds On Drain Source Resistance--50 Ohms
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
ZVN0545GTC MOSFET N-Chnl 450V
ZVN0545GTC MOSFET N-CH 450V 0.14A SOT223
ZVN0545GTGA New and Original
ZVN0545GTA-CUT TAPE New and Original
ZVN0545GTA Darlington Transistors MOSFET N-Chnl 450V
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