PartNumber | ZVN4525E6 | ZVN4525E6-7 | ZVN4525E6T |
Description | |||
Manufacturer | Diodes Incorporated | - | Diodes Incorporated |
Product Category | FETs - Single | - | FETs - Single |
Series | ZVN4525 | - | ZVN4525 |
Packaging | Cut Tape (CT) Alternate Packaging | - | Cut Tape (CT) Alternate Packaging |
Unit Weight | 0.000529 oz | - | 0.000529 oz |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package Case | SOT-23-6 | - | SOT-23-6 |
Technology | Si | - | Si |
Operating Temperature | -55°C ~ 150°C (TJ) | - | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | - | Surface Mount |
Number of Channels | 1 Channel | - | 1 Channel |
Supplier Device Package | SOT-23-6 | - | SOT-23-6 |
Configuration | Single Quad Drain | - | Single Quad Drain |
FET Type | MOSFET N-Channel, Metal Oxide | - | MOSFET N-Channel, Metal Oxide |
Power Max | 1.1W | - | 1.1W |
Transistor Type | 1 N-Channel | - | 1 N-Channel |
Drain to Source Voltage Vdss | 250V | - | 250V |
Input Capacitance Ciss Vds | 72pF @ 25V | - | 72pF @ 25V |
FET Feature | Standard | - | Standard |
Current Continuous Drain Id 25°C | 230mA (Ta) | - | 230mA (Ta) |
Rds On Max Id Vgs | 8.5 Ohm @ 500mA, 10V | - | 8.5 Ohm @ 500mA, 10V |
Vgs th Max Id | 1.8V @ 1mA | - | 1.8V @ 1mA |
Gate Charge Qg Vgs | 3.65nC @ 10V | - | 3.65nC @ 10V |
Pd Power Dissipation | 1.1 W | - | 1.1 W |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Fall Time | 1.7 ns | - | 1.7 ns |
Rise Time | 1.7 ns | - | 1.7 ns |
Vgs Gate Source Voltage | 40 V | - | 40 V |
Id Continuous Drain Current | 230 mA | - | 230 mA |
Vds Drain Source Breakdown Voltage | 250 V | - | 250 V |
Rds On Drain Source Resistance | 9.5 Ohms | - | 9.5 Ohms |
Transistor Polarity | N-Channel | - | N-Channel |
Typical Turn Off Delay Time | 11.4 ns | - | 11.4 ns |
Typical Turn On Delay Time | 1.25 ns | - | 1.25 ns |
Channel Mode | Enhancement | - | Enhancement |