PartNumber | ZVN4525E6TA | ZVN4525E6T | ZVN4525E6TA (ZETEX) |
Description | MOSFET N-Chnl 250V | ||
Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
Product Category | MOSFET | FETs - Single | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SOT-26-6 | - | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 250 V | - | - |
Id Continuous Drain Current | 230 mA | - | - |
Rds On Drain Source Resistance | 8.5 Ohms | - | - |
Vgs th Gate Source Threshold Voltage | 800 mV | - | - |
Vgs Gate Source Voltage | 10 V | - | - |
Qg Gate Charge | 2.6 nC | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 1.1 W | - | - |
Configuration | Single | Single Quad Drain | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | Cut Tape (CT) Alternate Packaging | - |
Height | 1.3 mm | - | - |
Length | 3.1 mm | - | - |
Product | MOSFET Small Signal | - | - |
Series | ZVN4525 | ZVN4525 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Type | FET | - | - |
Width | 1.8 mm | - | - |
Brand | Diodes Incorporated | - | - |
Forward Transconductance Min | 0.3 S | - | - |
Fall Time | 3.5 ns | 1.7 ns | - |
Product Type | MOSFET | - | - |
Rise Time | 1.7 ns | 1.7 ns | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 11.4 ns | 11.4 ns | - |
Typical Turn On Delay Time | 1.25 ns | 1.25 ns | - |
Unit Weight | 0.000529 oz | 0.000529 oz | - |
Package Case | - | SOT-23-6 | - |
Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
Mounting Type | - | Surface Mount | - |
Supplier Device Package | - | SOT-23-6 | - |
FET Type | - | MOSFET N-Channel, Metal Oxide | - |
Power Max | - | 1.1W | - |
Drain to Source Voltage Vdss | - | 250V | - |
Input Capacitance Ciss Vds | - | 72pF @ 25V | - |
FET Feature | - | Standard | - |
Current Continuous Drain Id 25°C | - | 230mA (Ta) | - |
Rds On Max Id Vgs | - | 8.5 Ohm @ 500mA, 10V | - |
Vgs th Max Id | - | 1.8V @ 1mA | - |
Gate Charge Qg Vgs | - | 3.65nC @ 10V | - |
Pd Power Dissipation | - | 1.1 W | - |
Vgs Gate Source Voltage | - | 40 V | - |
Id Continuous Drain Current | - | 230 mA | - |
Vds Drain Source Breakdown Voltage | - | 250 V | - |
Rds On Drain Source Resistance | - | 9.5 Ohms | - |