ZVP132

ZVP1320A vs ZVP1320B vs ZVP1320F

 
PartNumberZVP1320AZVP1320BZVP1320F
DescriptionMOSFET P-Chnl 200V
ManufacturerDiodes Incorporated-DIODES
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleThrough Hole-SMD/SMT
Package / CaseTO-92-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityP-Channel-P-Channel
Vds Drain Source Breakdown Voltage200 V--
Id Continuous Drain Current70 mA--
Rds On Drain Source Resistance80 Ohms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation625 mW--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
PackagingBulk-Digi-ReelR Alternate Packaging
ProductMOSFET Small Signal--
Transistor Type1 P-Channel-1 P-Channel
TypeFET--
BrandDiodes Incorporated--
Fall Time8 ns-8 ns
Product TypeMOSFET--
Rise Time8 ns-8 ns
Factory Pack Quantity4000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time8 ns-8 ns
Typical Turn On Delay Time8 ns-8 ns
Unit Weight0.016000 oz-0.000282 oz
Series--ZVP1320
Package Case--TO-236-3, SC-59, SOT-23-3
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--SOT-23-3
FET Type--MOSFET P-Channel, Metal Oxide
Power Max--350mW
Drain to Source Voltage Vdss--200V
Input Capacitance Ciss Vds--50pF @ 25V
FET Feature--Standard
Current Continuous Drain Id 25°C--35mA (Ta)
Rds On Max Id Vgs--80 Ohm @ 50mA, 10V
Vgs th Max Id--3.5V @ 1mA
Gate Charge Qg Vgs---
Pd Power Dissipation--330 mW
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--- 35 mA
Vds Drain Source Breakdown Voltage--- 200 V
Rds On Drain Source Resistance--80 Ohms
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
ZVP1320FTA MOSFET P-Chnl 200V
ZVP1320A MOSFET P-Chnl 200V
ZVP1320A MOSFET P-CH 200V 0.07A TO92-3
ZVP1320B New and Original
ZVP1320F New and Original
ZVP1320FTA Trans MOSFET P-CH 200V 0.035A Automotive 3-Pin SOT-23 T/R
ZVP1320FTA-CUT TAPE New and Original
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