PartNumber | ZVP3306ASTZ | ZVP3306ASTOB | ZVP3306A |
Description | MOSFET P-Chnl 60V | MOSFET P-Chnl 60V | MOSFET P-Chnl 60V |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-92-3 | TO-92-3 | TO-92-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | P-Channel | P-Channel | P-Channel |
Vds Drain Source Breakdown Voltage | 60 V | 60 V | 60 V |
Id Continuous Drain Current | 160 mA | 160 mA | 160 mA |
Rds On Drain Source Resistance | 14 Ohms | 14 Ohms | 14 Ohms |
Vgs Gate Source Voltage | 20 V | 20 V | 10 V |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 625 mW | 625 mW | 625 mW |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Bulk | Bulk | Bulk |
Product | MOSFET Small Signal | MOSFET Small Signal | MOSFET Small Signal |
Transistor Type | 1 P-Channel | 1 P-Channel | 1 P-Channel |
Type | FET | FET | FET |
Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Fall Time | 8 ns | 8 ns | 8 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 8 ns | 8 ns | 8 ns |
Factory Pack Quantity | 4000 | 4000 | 4000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 8 ns | 8 ns | 8 ns |
Typical Turn On Delay Time | 8 ns | 8 ns | 8 ns |
Unit Weight | 0.016000 oz | 0.016000 oz | 0.016000 oz |
Vgs th Gate Source Threshold Voltage | - | - | 1.5 V |
Height | - | - | 4.01 mm |
Length | - | - | 4.77 mm |
Series | - | - | ZVP3306 |
Width | - | - | 2.41 mm |
Forward Transconductance Min | - | - | 60 mS |