PartNumber | ZX3CD2S1M832TA | ZX3CDBS1M832TA | ZX3CD3S1M832TA |
Description | Bipolar Transistors - BJT PNP 20V/1A Sch Comb | Bipolar Transistors - BJT NPN 20V/1A Sch Comb | Bipolar Transistors - BJT PNP 40V/1A Sch Comb |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | T | Y | T |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | MLP-832-8 | MLP-832-8 | MLP-832-8 |
Transistor Polarity | PNP | NPN | PNP |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 20 V | 20 V | 40 V |
Collector Base Voltage VCBO | 25 V | 40 V | 50 V |
Emitter Base Voltage VEBO | - 7.5 V | - 7.5 V | - 7.5 V |
Maximum DC Collector Current | 3.5 A | 5 A | 3 A |
Gain Bandwidth Product fT | 180 MHz | 140 MHz | 190 MHz |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
DC Current Gain hFE Max | 300 | - | 300 |
Height | 1 mm | 1 mm | 1 mm |
Length | 3 mm | 3 mm | 3 mm |
Packaging | Reel | Reel | Reel |
Width | 2 mm | 2 mm | 2 mm |
Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
DC Collector/Base Gain hfe Min | 300 at 10 mA, 2 V, 300 at 100 mA, 2 V, 150 at 2 A, 2 V, 15 at 6 A, 2 V | - | 300 at 10 mA, 2 V, 300 at 100 mA, 2 V, 180 at 1 A, 2 V, 60 at 1.5 A, 2 V, 12 at 3 A, 2 V |
Pd Power Dissipation | 3000 mW | 3000 mW | 3000 mW |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | Transistors | Transistors | Transistors |