ZXM61P03

ZXM61P03FTA vs ZXM61P03 vs ZXM61P03F

 
PartNumberZXM61P03FTAZXM61P03ZXM61P03F
DescriptionMOSFET 30V P-Chnl HDMOSP CHANNEL MOSFET, -30V, 1.1A SOT-23, Transistor Polarity:P Channel, Continuous Drain Current Id:1.1A, Drain Source Voltage Vds:-30V, On Resistance Rds(on):0.35ohm, Rds(on) Test Voltage Vgs:-10V,
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETFETs - SingleFETs - Single
RoHSY--
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT-23-3--
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityP-ChannelP-ChannelP-Channel
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current1.1 A--
Rds On Drain Source Resistance350 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge4.8 nC--
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation806 mW--
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReelDigi-ReelR Alternate PackagingDigi-ReelR Alternate Packaging
Height1.02 mm--
Length3.04 mm--
ProductMOSFET Small Signal--
SeriesZXM61P03ZXM61P03ZXM61P03
Transistor Type1 P-Channel1 P-Channel1 P-Channel
TypeMOSFET--
Width1.4 mm--
BrandDiodes Incorporated--
Forward Transconductance Min0.44 S--
Fall Time5 ns2.9 ns2.9 ns
Product TypeMOSFET--
Rise Time2.9 ns2.9 ns2.9 ns
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time8.9 ns8.9 ns8.9 ns
Typical Turn On Delay Time1.9 ns1.9 ns1.9 ns
Unit Weight0.000282 oz0.000282 oz0.000282 oz
Package Case-TO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3
Operating Temperature--55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Mounting Type-Surface MountSurface Mount
Supplier Device Package-SOT-23-3SOT-23-3
FET Type-MOSFET P-Channel, Metal OxideMOSFET P-Channel, Metal Oxide
Power Max-625mW625mW
Drain to Source Voltage Vdss-30V30V
Input Capacitance Ciss Vds-140pF @ 25V140pF @ 25V
FET Feature-StandardStandard
Current Continuous Drain Id 25°C-1.1A (Ta)1.1A (Ta)
Rds On Max Id Vgs-350 mOhm @ 600mA, 10V350 mOhm @ 600mA, 10V
Vgs th Max Id-1V @ 250μA1V @ 250μA
Gate Charge Qg Vgs-4.8nC @ 10V4.8nC @ 10V
Pd Power Dissipation-625 mW625 mW
Vgs Gate Source Voltage-20 V20 V
Id Continuous Drain Current-- 1.1 A- 1.1 A
Vds Drain Source Breakdown Voltage-- 30 V- 30 V
Rds On Drain Source Resistance-550 mOhms550 mOhms
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
ZXM61P03FTA MOSFET 30V P-Chnl HDMOS
ZXM61P03FTC MOSFET 30V P Chnl HDMOS
ZXM61P03 New and Original
ZXM61P03F P CHANNEL MOSFET, -30V, 1.1A SOT-23, Transistor Polarity:P Channel, Continuous Drain Current Id:1.1A, Drain Source Voltage Vds:-30V, On Resistance Rds(on):0.35ohm, Rds(on) Test Voltage Vgs:-10V,
ZXM61P03FTA New and Original
ZXM61P03FTA- New and Original
ZXM61P03FTA/P03 New and Original
ZXM61P03FTC MOSFET P-CH 30V 1.1A SOT23-3
ZXM61P03FTA-CUT TAPE New and Original
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