 |  | | |
| PartNumber | ZXMC10A816N8TC | ZXMC10A816N8 | ZXMC10A816N8TA |
| Description | MOSFET 100V COMPLEMENTARY DUAL ENHANCEMNT MODE | 100V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET | |
| Manufacturer | Diodes Incorporated | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel, P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 2.1 A, 2.2 A | - | - |
| Rds On Drain Source Resistance | 230 mOhms, 235 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.7 V, 2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 9.2 nC, 16.5 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.8 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 1.5 mm | - | - |
| Length | 4.95 mm | - | - |
| Series | ZXMC10A8 | - | - |
| Transistor Type | 1 N-Channel, 1 P-Channel | - | - |
| Width | 3.95 mm | - | - |
| Brand | Diodes Incorporated | - | - |
| Forward Transconductance Min | 4.8 S, 4.7 S | - | - |
| Fall Time | 5 ns, 12 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 2.1 ns, 5.2 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 12.1 ns, 20 ns | - | - |
| Typical Turn On Delay Time | 2.9 ns, 4.3 ns | - | - |
| Unit Weight | 0.002610 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Diodes Incorporated |
ZXMC10A816N8TC | MOSFET 100V COMPLEMENTARY DUAL ENHANCEMNT MODE | |
| ZXMC10A816N8 | New and Original | ||
| ZXMC10A816N8TA | 100V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET | ||
| ZXMC10A816N8TC | Trans MOSFET N/P-CH 100V 2.1A/2.2A Automotive 8-Pin SO T/R |