PartNumber | ZXMD63N03XTA | ZXMD63N03X | ZXMD63N03XTC |
Description | MOSFET Dual 30V N Chl HDMOS | MOSFET 2N-CH 30V 2.3A 8MSOP | |
Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
Product Category | MOSFET | FETs - Arrays | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | MSOP-8 | - | - |
Number of Channels | 2 Channel | 2 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 30 V | - | - |
Id Continuous Drain Current | 2.3 A | - | - |
Rds On Drain Source Resistance | 135 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 1 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 8 nC | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 870 mW | - | - |
Configuration | Dual | Dual Dual Drain | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | Digi-ReelR Alternate Packaging | - |
Height | 0.95 mm | - | - |
Length | 3.1 mm | - | - |
Product | MOSFET Small Signal | - | - |
Series | ZXMD63 | ZXMD63 | - |
Transistor Type | 2 N-Channel | 2 N-Channel | - |
Type | MOSFET | - | - |
Width | 3.1 mm | - | - |
Brand | Diodes Incorporated | - | - |
Forward Transconductance Min | 1.9 S | - | - |
Fall Time | 4.1 ns | 4.1 ns | - |
Product Type | MOSFET | - | - |
Rise Time | 4.1 ns | 4.1 ns | - |
Factory Pack Quantity | 1000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 9.6 ns | 9.6 ns | - |
Typical Turn On Delay Time | 2.5 ns | 2.5 ns | - |
Unit Weight | 0.004938 oz | 0.004938 oz | - |
Package Case | - | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | - |
Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
Mounting Type | - | Surface Mount | - |
Supplier Device Package | - | 8-MSOP | - |
FET Type | - | 2 N-Channel (Dual) | - |
Power Max | - | 1.04W | - |
Drain to Source Voltage Vdss | - | 30V | - |
Input Capacitance Ciss Vds | - | 290pF @ 25V | - |
FET Feature | - | Logic Level Gate | - |
Current Continuous Drain Id 25°C | - | 2.3A | - |
Rds On Max Id Vgs | - | 135 mOhm @ 1.7A, 10V | - |
Vgs th Max Id | - | 1V @ 250μA (Min) | - |
Gate Charge Qg Vgs | - | 8nC @ 10V | - |
Pd Power Dissipation | - | 870 mW | - |
Vgs Gate Source Voltage | - | 20 V | - |
Id Continuous Drain Current | - | 2.3 A | - |
Vds Drain Source Breakdown Voltage | - | 30 V | - |
Vgs th Gate Source Threshold Voltage | - | 1 V | - |
Rds On Drain Source Resistance | - | 135 mOhms | - |
Qg Gate Charge | - | 8 nC | - |
Forward Transconductance Min | - | 1.9 S | - |