 |  |  | |
| PartNumber | ZXMD63P02XTC | ZXMD63P02X8TA | ZXMD63P02XTA |
| Description | MOSFET Dual 20V P Chl HDMOS | IGBT Transistors MOSFET Dual 20V P Chl HDMOS | |
| Manufacturer | Diodes Incorporated | - | Diodes Incorporated |
| Product Category | MOSFET | - | FETs - Arrays |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | MSOP-8 | - | - |
| Number of Channels | 2 Channel | - | 2 Channel |
| Transistor Polarity | P-Channel | - | P-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 1.7 A | - | - |
| Rds On Drain Source Resistance | 270 mOhms | - | - |
| Vgs Gate Source Voltage | 12 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 870 mW | - | - |
| Configuration | Dual | - | Dual Dual Drain |
| Channel Mode | Enhancement | - | Enhancement |
| Packaging | Reel | - | Tape & Reel (TR) |
| Height | 0.95 mm | - | - |
| Length | 3.1 mm | - | - |
| Product | MOSFET Small Signal | - | - |
| Transistor Type | 2 P-Channel | - | 2 P-Channel |
| Type | MOSFET | - | - |
| Width | 3.1 mm | - | - |
| Brand | Diodes Incorporated | - | - |
| Fall Time | 9.6 ns | - | 9.6 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 9.6 ns | - | 9.6 ns |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 16.4 ns | - | 16.4 ns |
| Typical Turn On Delay Time | 3.4 ns | - | 3.4 ns |
| Unit Weight | 0.004938 oz | - | 0.004938 oz |
| Series | - | - | ZXMD63 |
| Package Case | - | - | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | 8-MSOP |
| FET Type | - | - | 2 P-Channel (Dual) |
| Power Max | - | - | 1.04W |
| Drain to Source Voltage Vdss | - | - | 20V |
| Input Capacitance Ciss Vds | - | - | 290pF @ 15V |
| FET Feature | - | - | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | - | - |
| Rds On Max Id Vgs | - | - | 270 mOhm @ 1.2A, 4.5V |
| Vgs th Max Id | - | - | 700mV @ 250μA (Min) |
| Gate Charge Qg Vgs | - | - | 5.25nC @ 4.5V |
| Pd Power Dissipation | - | - | 870 mW |
| Vgs Gate Source Voltage | - | - | 12 V |
| Id Continuous Drain Current | - | - | - 1.7 A |
| Vds Drain Source Breakdown Voltage | - | - | - 20 V |
| Rds On Drain Source Resistance | - | - | 270 mOhms |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Diodes Incorporated |
ZXMD63P02XTC | MOSFET Dual 20V P Chl HDMOS | |
| ZXMD63P02X8TA | New and Original | ||
| ZXMD63P02XTA | IGBT Transistors MOSFET Dual 20V P Chl HDMOS |