ZXMD65P02

ZXMD65P02N8TA vs ZXMD65P02 vs ZXMD65P02N8

 
PartNumberZXMD65P02N8TAZXMD65P02ZXMD65P02N8
DescriptionMOSFET Dl 20V P-Chnl HDMOS
ManufacturerDiodes Incorporated-Diodes Incorporated
Product CategoryMOSFET-FETs - Arrays
RoHST--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels2 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current5.1 A--
Rds On Drain Source Resistance80 mOhms--
Vgs Gate Source Voltage12 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.25 W--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReel-Digi-ReelR
ProductMOSFET Small Signal--
Transistor Type2 P-Channel--
TypeMOSFET--
BrandDiodes Incorporated--
Fall Time29.9 ns--
Product TypeMOSFET--
Rise Time29.9 ns--
Factory Pack Quantity500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time57.9 ns--
Typical Turn On Delay Time6.6 ns--
Unit Weight0.002610 oz--
Series---
Package Case--8-SOIC (0.154", 3.90mm Width)
Operating Temperature---
Mounting Type--Surface Mount
Supplier Device Package--8-SO
FET Type--2 P-Channel (Dual)
Power Max--1.75W
Drain to Source Voltage Vdss--20V
Input Capacitance Ciss Vds--960pF @ 15V
FET Feature--Standard
Current Continuous Drain Id 25°C--4A
Rds On Max Id Vgs--50 mOhm @ 2.9A, 4.5V
Vgs th Max Id--700mV @ 250μA (Min)
Gate Charge Qg Vgs--20nC @ 4.5V
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
ZXMD65P02N8TA MOSFET Dl 20V P-Chnl HDMOS
ZXMD65P02 New and Original
ZXMD65P02N8 New and Original
ZXMD65P02N8TA MOSFET 2P-CH 20V 4A 8-SOIC
ZXMD65P02N8TC MOSFET 2P-CH 20V 4A 8SOIC
Top