ZXMD65P03

ZXMD65P03N8TA vs ZXMD65P03 vs ZXMD65P03N8

 
PartNumberZXMD65P03N8TAZXMD65P03ZXMD65P03N8
DescriptionMOSFET Dl 30V P-Chnl HDMOS
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryMOSFETIC Chips-
RoHSN--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels2 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current4.8 A--
Rds On Drain Source Resistance55 mOhms--
Vgs Gate Source Voltage20 V--
Pd Power Dissipation2 W--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReelCut Tape (CT)-
Height1.5 mm--
Length5 mm--
Transistor Type2 P-Channel--
Width4 mm--
BrandDiodes Incorporated--
Fall Time26.2 ns--
Product TypeMOSFET--
Rise Time6.4 ns--
SubcategoryMOSFETs--
Typical Turn Off Delay Time49.5 ns--
Typical Turn On Delay Time3.8 ns--
Unit Weight0.002610 oz--
Series---
Package Case-8-SOIC (0.154", 3.90mm Width)-
Operating Temperature---
Mounting Type-Surface Mount-
Supplier Device Package-8-SO-
FET Type-2 P-Channel (Dual)-
Power Max-1.75W-
Drain to Source Voltage Vdss-30V-
Input Capacitance Ciss Vds-930pF @ 25V-
FET Feature-Standard-
Current Continuous Drain Id 25°C-3.8A-
Rds On Max Id Vgs-55 mOhm @ 4.9A, 10V-
Vgs th Max Id-1V @ 250μA (Min)-
Gate Charge Qg Vgs-25.7nC @ 10V-
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
ZXMD65P03N8TA MOSFET Dl 30V P-Chnl HDMOS
ZXMD65P03N8TA MOSFET 2P-CH 30V 3.8A 8-SOIC
ZXMD65P03 New and Original
ZXMD65P03N8 New and Original
ZXMD65P03N8TC New and Original
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