| PartNumber | ZXMN10A07FTA | ZXMN10A07ZTA | ZXMN10A07FTC |
| Description | MOSFET 100V N-Chnl UMOS | MOSFET 100V N-Chnl UMOS | MOSFET 100V N-Chnl UMOS |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-23-3 | SOT-89-3 | SOT-23-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | 100 V |
| Id Continuous Drain Current | 800 mA | 1.4 A | 800 mA |
| Rds On Drain Source Resistance | 700 mOhms | 900 mOhms | 900 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
| Vgs Gate Source Voltage | 10 V | 20 V | 20 V |
| Qg Gate Charge | 2.9 nC | 2.9 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 806 mW | 2.6 W | 625 mW |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Height | 1.02 mm | 1.6 mm | - |
| Length | 3.04 mm | 4.6 mm | - |
| Product | MOSFET Small Signal | - | MOSFET Small Signal |
| Series | ZXMN10A07 | ZXMN10A | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | MOSFET | MOSFET | MOSFET |
| Width | 1.4 mm | 2.6 mm | - |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Forward Transconductance Min | 1.6 S | 1.6 S | - |
| Fall Time | 2.1 ns | 2.1 ns | 1.5 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 1.5 ns | 1.5 ns | 1.5 ns |
| Factory Pack Quantity | 3000 | 1000 | 10000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 4.1 ns | 4.1 ns | 4.1 ns |
| Typical Turn On Delay Time | 1.8 ns | 1.8 ns | 1.8 ns |
| Unit Weight | 0.000282 oz | 0.004603 oz | 0.000282 oz |