PartNumber | ZXMN10A25GTA | ZXMN10A25KTC |
Description | MOSFET 100V N-Channel 2.9A MOSFET | MOSFET N-Chan 100V MOSFET (UMOS) |
Manufacturer | Diodes Incorporated | Diodes Incorporated |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | SOT-223-3 | TO-252-3 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 100 V | 100 V |
Id Continuous Drain Current | 4 A | 6.4 A |
Rds On Drain Source Resistance | 125 mOhms | 125 mOhms |
Vgs Gate Source Voltage | 20 V | 20 V |
Minimum Operating Temperature | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Pd Power Dissipation | 3.9 W | 2.11 W |
Configuration | Single | Single |
Channel Mode | Enhancement | Enhancement |
Packaging | Reel | Reel |
Height | 1.65 mm | 2.39 mm |
Length | 6.7 mm | 6.73 mm |
Series | ZXMN10A | ZXMN10A |
Transistor Type | 1 N-Channel | 1 N-Channel |
Width | 3.7 mm | 6.22 mm |
Brand | Diodes Incorporated | Diodes Incorporated |
Fall Time | 9.4 ns | 9.4 ns |
Product Type | MOSFET | MOSFET |
Rise Time | 3.7 ns | 3.7 ns |
Factory Pack Quantity | 1000 | 2500 |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 18 ns | 17.7 ns |
Typical Turn On Delay Time | 4.9 ns | 4.9 ns |
Unit Weight | 0.003951 oz | - |
Vgs th Gate Source Threshold Voltage | - | 4 V |
Qg Gate Charge | - | 9.6 nC |