ZXMN10B

ZXMN10B08E6 vs ZXMN10B08E6QTA , MAX6465 vs ZXMN10B08E6T

 
PartNumberZXMN10B08E6ZXMN10B08E6QTA , MAX6465ZXMN10B08E6T
Description
ManufacturerZETEX-Diodes Incorporated
Product CategoryFETs - Single-FETs - Single
Series--ZXMN10
Packaging--Digi-ReelR Alternate Packaging
Unit Weight--0.000529 oz
Mounting Style--SMD/SMT
Package Case--SOT-23-6
Technology--Si
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Number of Channels--1 Channel
Supplier Device Package--SOT-26
Configuration--Single Quad Drain
FET Type--MOSFET N-Channel, Metal Oxide
Power Max--1.1W
Transistor Type--1 N-Channel
Drain to Source Voltage Vdss--100V
Input Capacitance Ciss Vds--497pF @ 50V
FET Feature--Standard
Current Continuous Drain Id 25°C--1.6A (Ta)
Rds On Max Id Vgs--230 mOhm @ 1.6A, 10V
Vgs th Max Id--3V @ 250μA
Gate Charge Qg Vgs--9.2nC @ 10V
Pd Power Dissipation--1.1 W
Maximum Operating Temperature--+ 150 C
Minimum Operating Temperature--- 55 C
Fall Time--2.1 ns
Rise Time--2.1 ns
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--1.9 A
Vds Drain Source Breakdown Voltage--100 V
Rds On Drain Source Resistance--230 mOhms
Transistor Polarity--N-Channel
Typical Turn Off Delay Time--12.1 ns
Typical Turn On Delay Time--2.9 ns
Channel Mode--Enhancement
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
ZXMN10B08E6TA MOSFET 100V N-Chnl UMOS
ZXMN10B08E6 New and Original
ZXMN10B08E6QTA , MAX6465 New and Original
ZXMN10B08E6T New and Original
ZXMN10B08E6TAPBF New and Original
ZXMN10B08E6TC MOSFET N-CH 100V 1.6A SOT23-6
ZXMN10B08E6TA-CUT TAPE New and Original
ZXMN10B08E6TA Darlington Transistors MOSFET 100V N-Chnl UMOS
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