 |  | | |
| PartNumber | ZXMN20B28KTC | ZXMN20B28 | ZXMN20B28K |
| Description | MOSFET ENHANCE MODE MOSFET 200V N-CHANNEL | ||
| Manufacturer | Diodes Incorporated | - | Diodes Incorporated |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 200 V | - | - |
| Id Continuous Drain Current | 2.3 A | - | - |
| Rds On Drain Source Resistance | 750 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.6 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 8.1 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 4.3 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | Enhancement |
| Packaging | Reel | - | Digi-ReelR Alternate Packaging |
| Series | ZXMN20 | - | ZXMN20 |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Brand | Diodes Incorporated | - | - |
| Forward Transconductance Min | 6.13 S | - | - |
| Fall Time | 57.1 ns | - | 57.1 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 76.9 ns | - | 76.9 ns |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 44.7 ns | - | 44.7 ns |
| Typical Turn On Delay Time | 17.8 ns | - | 17.8 ns |
| Unit Weight | 0.139332 oz | - | 0.139332 oz |
| Package Case | - | - | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | TO-252-3 |
| FET Type | - | - | MOSFET N-Channel, Metal Oxide |
| Power Max | - | - | 2.2W |
| Drain to Source Voltage Vdss | - | - | 200V |
| Input Capacitance Ciss Vds | - | - | 358pF @ 25V |
| FET Feature | - | - | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | - | 1.5A (Ta) |
| Rds On Max Id Vgs | - | - | 750 mOhm @ 2.75A, 10V |
| Vgs th Max Id | - | - | 2.5V @ 250μA |
| Gate Charge Qg Vgs | - | - | 8.1nC @ 5V |
| Pd Power Dissipation | - | - | 4.3 W |
| Vgs Gate Source Voltage | - | - | +/- 20 V |
| Id Continuous Drain Current | - | - | 2.3 A |
| Vds Drain Source Breakdown Voltage | - | - | 200 V |
| Vgs th Gate Source Threshold Voltage | - | - | 1.6 V |
| Rds On Drain Source Resistance | - | - | 750 mOhms |
| Qg Gate Charge | - | - | 8.1 nC |
| Forward Transconductance Min | - | - | 6.13 S |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Diodes Incorporated |
ZXMN20B28KTC | MOSFET ENHANCE MODE MOSFET 200V N-CHANNEL | |
| ZXMN20B28 | New and Original | ||
| ZXMN20B28K | New and Original | ||
| ZXMN20B28KTC | MOSFET N-CH 200V 1.5A DPAK |