 |  | | |
| PartNumber | ZXMN2A14FTA | ZXMN2A14 | ZXMN2A14F |
| Description | MOSFET N Channel | ||
| Manufacturer | Diodes Incorporated | - | Diodes Incorporated |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | SOT-23-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 4.1 A | - | - |
| Rds On Drain Source Resistance | 110 mOhms | - | - |
| Vgs Gate Source Voltage | 12 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 1 W | - | - |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Packaging | Reel | - | Digi-ReelR Alternate Packaging |
| Height | 1.02 mm | - | - |
| Length | 3.04 mm | - | - |
| Series | ZXMN2A1 | - | ZXMN2A1 |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Type | MOSFET | - | - |
| Width | 1.4 mm | - | - |
| Brand | Diodes Incorporated | - | - |
| Fall Time | 9.5 ns | - | 9.5 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 5.3 ns | - | 5.3 ns |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 16.6 ns | - | 16.6 ns |
| Typical Turn On Delay Time | 4 ns | - | 4 ns |
| Unit Weight | 0.000282 oz | - | 0.000282 oz |
| Package Case | - | - | TO-236-3, SC-59, SOT-23-3 |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | SOT-23-3 |
| FET Type | - | - | MOSFET N-Channel, Metal Oxide |
| Power Max | - | - | 1W |
| Drain to Source Voltage Vdss | - | - | 20V |
| Input Capacitance Ciss Vds | - | - | 544pF @ 10V |
| FET Feature | - | - | Standard |
| Current Continuous Drain Id 25°C | - | - | 3.4A (Ta) |
| Rds On Max Id Vgs | - | - | 60 mOhm @ 3.4A, 4.5V |
| Vgs th Max Id | - | - | 700mV @ 250μA |
| Gate Charge Qg Vgs | - | - | 6.6nC @ 4.5V |
| Pd Power Dissipation | - | - | 1 W |
| Vgs Gate Source Voltage | - | - | 12 V |
| Id Continuous Drain Current | - | - | 4.1 A |
| Vds Drain Source Breakdown Voltage | - | - | 20 V |
| Rds On Drain Source Resistance | - | - | 110 mOhms |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Diodes Incorporated |
ZXMN2A14FTA | MOSFET N Channel | |
| ZXMN2A14 | New and Original | ||
| ZXMN2A14F | New and Original | ||
| ZXMN2A14FTA | New and Original | ||
| ZXMN2A14FTC | New and Original | ||
| ZXMN2A14FTA-CUT TAPE | New and Original |